Drive power supplying method for semiconductor memory device and semiconductor memory device

摘要

A drive power supply method for a semiconductor device is provided. The semiconductor device has an internal supply voltage generating circuit. First and second internal circuits are connected to the internal supply voltage generating circuit. Drive power is supplied to the first and second internal circuits from the internal supply voltage generating circuit. The second internal circuit operates in standby mode, power-down mode and active mode, so that the internal supply voltage is stably retained in the standby mode or power-down mode, and the consumed current is reduced.