DRIVE POWER SUPPLY METHOD FOR SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, DRIVE POWER SUPPLY METHOD FOR SEMICONDUCTOR MEMORY, AND SEMICONDUCTOR MEMORY

摘要

PROBLEM TO BE SOLVED: To provide an internal power source generating circuit in which internal power source voltage is held stably at the time of a standby mode and a power down mode and needless current consumption is reduced. SOLUTION: First to third internal power source voltage generating circuits 11-13 provided in accordance with respective use are provided with respectively a voltage drop circuit for large power and a voltage drop circuit for small power. A peripheral function circuit group 14 controlled to activation and inactivation and a self-plate voltage generating circuit 17 being always active are connected to the first internal power source voltage generating circuit 11. An input/output circuit group 15 controlled to activation and inactivation and a bit line pre-charge voltage generating circuit 18 being always active are connected to the second internal power source voltage generating circuit 12. A memory core circuit group 16 controlled to activation and inactivation and a self-refresh oscillating circuit 19 being always active are connected to the third internal power source voltage generating circuit 13.