首页> 外国专利> Semiconductor circuit compensating for changes in gain slope of the circuit's gain-frequency characteristic caused by ambient temperature changes

Semiconductor circuit compensating for changes in gain slope of the circuit's gain-frequency characteristic caused by ambient temperature changes

机译:半导体电路可补偿由于环境温度变化引起的电路增益频率特性的增益斜率变化

摘要

Compensating for fluctuations in the gain characteristic of the gain slope in the event of changes in ambient temperature without increasing circuit scale or adding to costs. A thermistor, which is a thermally sensitive resistance element in which resistance changes with a negative temperature characteristic according to the ambient temperature, is employed as the gate resistance of an FET, and the circuit functions such that fluctuations in the gain characteristic of the gain slope with respect to ambient temperature are canceled out by fluctuations in the value of Q with respect to the ambient temperature, thereby compensating for fluctuations in the gain slope characteristic in the event of changes in the ambient temperature.
机译:在环境温度变化的情况下补偿增益斜率的增益特性的波动,而不会增加电路规模或增加成本。作为热敏电阻元件的热敏电阻被用作FET的栅极电阻,其中电阻根据周围温度而以负温度特性变化,该热敏电阻被用作FET的栅极电阻,并且电路起作用以使得增益斜率的增益特性发生波动。通过相对于环境温度的Q值的波动来抵消相对于环境温度的波动,从而在环境温度变化的情况下补偿增益斜率特性的波动。

著录项

  • 公开/公告号US6147557A

    专利类型

  • 公开/公告日2000-11-14

    原文格式PDF

  • 申请/专利权人 NEC CORPORATION;

    申请/专利号US19980195621

  • 申请日1998-11-19

  • 分类号H03F3/16;H03F3/191;

  • 国家 US

  • 入库时间 2022-08-22 01:06:42

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