Insitu hardmask and metal etch in a single etcher

摘要

A method of manufacturing a semiconductor wafer wherein a layer of hardmask material is formed on the surface of a metal layer formed on a layer of interlayer dielectric formed on a semiconductor substrate on and in which active devices have been formed. A layer of photoresist is formed on the surface of the layer of hardmask material, patterned and developed exposing portions of the underlying layer of hardmask material. The semiconductor wafer is placed in an etched and the layer of hardmask material is etched in a first process utilizing a combination fluorine and chlorine chemistry and the metal layer is etched in a second process utilizing a combination fluorine and chlorine chemistry.