首页>
外国专利>
Method for substantially preventing footings in chemically amplified deep ultra violet photoresist layers
Method for substantially preventing footings in chemically amplified deep ultra violet photoresist layers
展开▼
机译:基本上防止化学放大的深紫外光致抗蚀剂层中立足点的方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
Disclosed is a method for making a metallization layered stack over an oxide layer of a semiconductor substrate, and a metallization layered stack that assists in providing superior deep UV photolithography resolution. The method includes forming a bottom titanium nitride layer over the oxide layer, and forming an aluminum metallization layer over the bottom titanium nitride layer. The method further includes forming a top titanium nitride layer over the aluminum metallization layer, such that the forming of the top titanium nitride layer includes: (a) placing the semiconductor substrate in an ionized metal plasma chamber having an RF powered coil and a titanium target; (b) introducing an argon gas and a nitrogen gas into the ionized metal plasma chamber; (c) pressuring up the ionized metal plasma chamber to a pressure of between about 10 mTorr and about 50 mTorr, whereby the top titanium nitride layer is formed as a dense titanium nitride film.
展开▼