Post barrier metal contact implantation to minimize out diffusion for NAND device

摘要

An improved method for fabricating a NAND-type memory cell structure. The present invention forgoes providing a contact mask implantation process prior to deposition of a metal barrier layer, which is a typical order of processing the NAND-type memory cell. Instead, in the present invention, the metal barrier layer is deposited on a core area of the NAND-type memory cell prior to contact mask implantation. Thereafter, the contact mask implantation process is performed on the structure in a conventional manner.