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Memory data and address checking within a solid state memory device

机译:固态存储设备中的存储器数据和地址检查

摘要

An integrated solid state memory device 22 (and Fig. 8) includes addressable memory locations 33, and receives an address identifying at least one memory location, and associated verification information (e.g. parity or error correcting information). Within the device, decoding logic 31, 32 decodes the received address, and verification logic 30 verifies the received address. The verification logic can be configured to prevent access to, or modification of, the memory locations, and/or prevent output of the content of an addressed memory location, where address verification is negative, under which circumstances an error signal can be generated and used to report a fault to the memory controller (20, Fig.2) and/or processor (12, Fig. 1), or to cause a retry of the addressing operation. The address verification can be performed at memory bank level if the device includes separate memory banks (Fig. 7). The verification logic 30 can also verify data supplied to the data buffer, such that storage of the data is prevented where data verification is negative: the independent claim relates to this data verification aspect.
机译:集成固态存储器设备22(和图8)包括可寻址存储器位置33,并接收标识至少一个存储器位置的地址以及相关联的验证信息(例如,奇偶校验或纠错信息)。在设备内,解码逻辑31、32解码接收到的地址,并且验证逻辑30验证接收到的地址。验证逻辑可以配置为防止访问或修改存储位置,和/或防止输出地址寻址为负的寻址存储位置的内容,在这种情况下,可以生成并使用错误信号向存储控制器(图2,20)和/或处理器(图1,12)报告故障,或重试寻址操作。如果设备包括单独的存储库,则可以在存储库级别执行地址验证(图7)。验证逻辑30还可以验证提供给数据缓冲器的数据,从而在数据验证为否定的情况下防止数据的存储:独立权利要求涉及该数据验证方面。

著录项

  • 公开/公告号GB2352069A

    专利类型

  • 公开/公告日2001-01-17

    原文格式PDF

  • 申请/专利权人 * SUN MICROSYSTEMS INC.;

    申请/专利号GB20000023799

  • 发明设计人 JEREMY * HARRIS;

    申请日1999-07-09

  • 分类号G06F11/10;

  • 国家 GB

  • 入库时间 2022-08-22 01:05:27

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