Ion implantation system and method suitable for low energy ion beam implantation

摘要

In an ion implantation system, an ion beam generator generates and emits an ion beam containing ions of a target impurity element. A mass analyzing system derives desired ions from the ion beam to output an ion beam containing the desired ions. The ion beam emitted from the mass analyzing system becomes incident upon an inner cavity defined by a beam line. An electrostatic lens is being disposed in the inner cavity. The electrostatic lens converges the ion beam entered the inner cavity. The ion beam emitted from the beam line impinges upon a substrate into which impurities are to be implanted. A vacuum pump is being mounted on the beam line to evacuate the inner cavity of the beam line.