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Method for formation of impurity region in semiconductor layer and apparatus for introducing impurity to semiconductor layer
Method for formation of impurity region in semiconductor layer and apparatus for introducing impurity to semiconductor layer
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机译:在半导体层中形成杂质区域的方法和将杂质引入半导体层的设备
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摘要
The invention relates to method of formation of an impurity region in a semiconductor layer by introducing a dopant impurity as a donor or an acceptor. The formation method comprises the steps of: mixing an impurity gas with a gas containing any one of H2 and an inert gas, electrically discharging the mixed gas, diffusing impurities adhered to the surface of a semiconductor layer into the semiconductor layer, by introducing the discharged impurity gas to the surface of the semiconductor layer and at the same time accelerating ions of the gas containing any one of the H2 and inert gases to irradiate the surface of the semiconductor layer and, by raising the temperature of the surface of the semiconductor layer, electrically activating the same.
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