首页> 外国专利> Serif mask design methodology based on enhancing high spatial frequency contribution for improved printability

Serif mask design methodology based on enhancing high spatial frequency contribution for improved printability

机译:基于增强高空间频率贡献以提高可印刷性的衬线掩模设计方法

摘要

A proximity correction serif design methodology is described that provides improved inner and outer corner rounding, line end shortening, as well as improvements in more general undesirable two-dimensional shape distortions introduced into the lithographic printing process due to proximity effects. Using this method, exact solutions are shown for the specialized cases of either coherent or incoherent illumination exposing a hypothetical resist that develops via a simple diffusion like mechanism. The basis of this method for predicting the positions and shapes of serifs is tied to the need to increase the components of high spatial frequency that are essentially lost due to diffraction, diffusion, dissolution, and etching related effects. The correct amount to increase the spatial components is determined in the coordinate space and makes use of an empirical characterization of these physical factors.
机译:描述了一种接近校正衬线设计方法,该方法提供了改进的内部和外部拐角圆角,线端缩短以及由于接近效应而引入平版印刷工艺中的更普遍的不期望的二维形状变形的改进。使用这种方法,对于相干或不相干照明的特殊情况,可以显示出精确的解决方案,这些情况会暴露通过简单的类似扩散机制形成的假设抗蚀剂。该方法用于预测衬线的位置和形状,其基础是需要增加由于衍射,扩散,溶解和蚀刻相关的影响而实质上损失的高空间频率分量。在坐标空间中确定增加空间分量的正确量,并利用这些物理因素的经验表征。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号