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Method for contact anneal in a doped dielectric layer without dopant diffusion problem
Method for contact anneal in a doped dielectric layer without dopant diffusion problem
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机译:在没有掺杂剂扩散问题的情况下在掺杂介电层中进行接触退火的方法
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摘要
A method for annealing a contact in a doped dielectric layer without the occurrence of dopant diffusion problem by depositing a sacrificial barrier layer of oxide material in the contact opening which is capable of preventing diffusion of dopant ions into the contact opening during a high temperature reflow process for the doped dielectric layer and followed by a deposition of an electrically conductive metal into the contact opening.
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