首页>
外国专利>
Temperature sensing circuit for voltage drive type semiconductor device and temperature sensing method therefore, and drive-device and voltage drive type semiconductor device using the same
Temperature sensing circuit for voltage drive type semiconductor device and temperature sensing method therefore, and drive-device and voltage drive type semiconductor device using the same
In order to provide a highly accurate and reliable temperature sensing circuit and method, a resistor (10a) having a positive temperature coefficient is connected between the gate terminal (4) and the insulated gate electrode (8a) of the voltage drive type semiconductor device (1a), and the temperature is sensed based on a voltage representing a voltage drop across the resistor in a circuit portion between the gate terminal (4) and the other terminal (5).
展开▼
机译:为了提供高精度和可靠的温度感测电路和方法,在栅极端子()之间连接了具有正温度系数的电阻( 10 B> a I>) 4 B>和电压驱动型半导体器件( 1 B> a <的绝缘栅电极( 8 B> a I>) / I>),并根据代表栅极端子( 4 B>)和另一端子( 5 p>)之间的电路部分中电阻两端的电压降的电压来感测温度。 B>)。
展开▼