Temperature sensing in voltage drive type semiconductor device

摘要

In order to provide a high accurate and reliable temperature sensing circuit and a method, a resistor (10a) having a positive temperature coefficient connected between the gate terminal (4) and the insulated gate electrode (8a) of the voltage drive type semiconductor device (1a), and temperature is sensed based on a voltage including voltage drop by the resistor in a circuit portion between the gate terminal (4) and the other terminal (5). IMAGE