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GaInAsP/AIGaInP laser diodes with AIGaAs type II carrier blocking layer in the waveguide

机译：在波导中具有AIGaAs II型载流子阻挡层的GaInAsP / AIGaInP激光二极管

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摘要

A GaInAsP/AR GaInP laser diode is provided with an AlGaAs type II carrier blocking layer in the waveguide of the diode. The resulting diode exhibits a relatively low threshold current, an increased slope efficiency and characteristic T0 and T1, for the diodes are less limited by carrier leakage.

机译：GaInAsP / AR GaInP激光二极管在二极管的波导中设有AlGaAs II型载流子阻挡层。所得的二极管表现出相对较低的阈值电流，增加的斜率效率和特性T 0 和T 1 ，因为二极管受载流子泄漏的限制较小。 展开▼

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公开/公告号US6298077B1

专利类型

公开/公告日2001-10-02

原文格式PDF

申请/专利权人 OPTO POWER CORPORATION;
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申请/专利号US19990250900

发明设计人 XIAUGUANG HE;
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申请日1999-02-16

分类号H01S53/23;

国家 US

入库时间 2022-08-22 01:03:08

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