首页> 外国专利> Methods of forming integrated circuitry methods of forming thin film transistors, integrated circuitry and thin film transistors

Methods of forming integrated circuitry methods of forming thin film transistors, integrated circuitry and thin film transistors

机译:形成集成电路的方法形成薄膜晶体管的方法,集成电路和薄膜晶体管

摘要

An electrical interconnection method includes: a) providing two conductive layers separated by an insulating material on a semiconductor wafer; b) etching the conductive layers and insulating material to define and outwardly expose a sidewall of each conductive layer; c) depositing an electrically conductive material over the etched conductive layers and their respective sidewalls; and d) anisotropically a etching the conductive material to define an electrically conductive sidewall link electrically interconnecting the two conductive layers. Such is utilizable to make thin film transistors and other circuitry.
机译:一种电互连方法,包括:a)在半导体晶片上提供由绝缘材料隔开的两个导电层; b)蚀刻导电层和绝缘材料,以限定并向外暴露每个导电层的侧壁; c)在蚀刻的导电层及其各自的侧壁上沉积导电材料; d)各向异性地蚀刻导电材料,以限定将两个导电层电互连的导电侧壁连接。这样可用于制造薄膜晶体管和其他电路。

著录项

  • 公开/公告号US6306696B1

    专利类型

  • 公开/公告日2001-10-23

    原文格式PDF

  • 申请/专利权人 MICRON TECHNOLOGY INC.;

    申请/专利号US19980025214

  • 发明设计人 CHARLES H. DENNISON;MONTE MANNING;

    申请日1998-02-18

  • 分类号H01L210/00;

  • 国家 US

  • 入库时间 2022-08-22 01:03:03

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号