The new shallow groove isolation etching method of not using HBR

摘要

(57) Abstract Topic The hydrogen bromide the etching constitution which is not included is offered. Is longer in comparison with etsuchiyanto which therefore includes the hydrogen bromide life of the chamber where etsuchiyanto of this invention corrosiveness is little, little cost is given. SolutionsThe true tsu immediately etching constitution in order to etch the groove where the wall and the taper are attached, includes with chlorine and nitrogen and helium and the blend of oxygen to the silicon substrate. It can fill up the groove which can as the result, easily with the dielectric material without forming the air gap.