PURPOSE: To achieve a small cell size easily and at the same time obtain a high turn-off capacity by forming a channel at an emitter layer region so that a first conductive type diffusion layer is exposed and a second main electrode in contact with the first conductive layer and the emitter layer through the channel. ;CONSTITUTION: A p-type emitter layer 1, an n-type base layer 2, a p-type base layer 3, and an n-type emitter layer 4 constituting a pnpn thyristor structure are formed in sequence and at the same time an n-type well layer 5 is formed on the surface of the base layer 1. Also, a p-type source layer 6 is selectively formed from the surface of the well layer 5 toward the surface of the emitter layer 4 and at the same time a gate electrode 9 for turn-off is provided on the well layer 5. Then, a MOSFET for injecting electrons from the n-type emitter layer 4 to the base layer 3 is provided and at the same time an anode electrode 12 is formed on the emitter layer 4. Further, a channel 7 is formed at the region of the emitter layer 4 so that the source layer 6 is exposed and a cathode electrode 11 in contact with the source layer 6 and the emitter layer 4 via the channel 7 is provided.;COPYRIGHT: (C)1994,JPO&Japio
展开▼
