EPITAXIAL GROWTH METHOD OF InGaP LAYER OR InAlP LAYER

摘要

PROBLEM TO BE SOLVED: To reduce the density of hillocks of a major surface 12A of an InGaP layer 12.;SOLUTION: Intermediate reaction between group III raw gas and group V raw gas in a boundary layer near a GaAs substrate 10 is restrained.;COPYRIGHT: (C)2002,JPO