GARNET SINGLE CRYSTAL SUBSTRATE AND METHOD FOR PRODUCING BISMUTH-SUBSTITUTED RARE EARTH GARNET SINGLE CRYSTAL FILM USING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a single crystal substrate preferably used for industrially producing a high quality bismuth-substituted rare earth garnet single crystal film by the liquid phase epitaxial method and to provide a method for producing the bismuth-substituted rare earth garnet single crystal film using the same.;SOLUTION: The single crystal substrate is used for epitaxially growing the bismuth-substituted rare earth garnet single crystal in a liquid phase, and has a composition expressed by the compositional formula: MA₃ Ga_5-x(Sc_1-yMB_y)_xO₁₂, wherein MA is at least one element selected from rare earth elements, Ca and Mg, MB is at least one element selected from In, Al, Si, Ge and Zr, 1.0≤x≤3.0 and 0y≤0.5.;COPYRIGHT: (C)2002,JPO