METHOD AND DEVICE FOR DEPOSITING SILICON THIN FILM BY THERMOPLASMA CVD

摘要

PROBLEM TO BE SOLVED: To provide the depositing method of a silicon thin film, which can generate the silicon thin film at high speed, while the fine film is obtained.;SOLUTION: In a method for forming the crystallite or polycrystalline silicon film by a plasma CVD method, plasma is thermoplasma, raw material gas having silicon atoms is decomposed thermally, and raw material gas which is thermally decomposed is loaded on a high-temperature plasma flow which thermoplasma forms so as to supply it. Then, silicon is deposited on the substrate.;COPYRIGHT: (C)2002,JPO