首页> 外国专利> LOW TEMPERATURE SYSTEM LEAD-FREE SOLDER COMPOSITION AND ELECTRONIC PARTS-PACKAGED STRUCTURE USING THE SAME

LOW TEMPERATURE SYSTEM LEAD-FREE SOLDER COMPOSITION AND ELECTRONIC PARTS-PACKAGED STRUCTURE USING THE SAME

机译:低温系统无铅焊料成分和电子零件封装结构

摘要

PROBLEM TO BE SOLVED: To provide solder which is hardly changed in its structure in spite of long- time use at a high temperature and is capable of assuring joint boundary strength and is hardly oxidizable in spite of long-time use in flow soldering in the atmosphere.;SOLUTION: The strength at the joint boundary is assured in the case of the long- time use at the high temperature and the stability of the structure at the high temperature is assured by slightly adding Ni to Sn-Ag-Bi eutectic system solder. Ti is added in a slight amount to the structure, by which the Ti is dispersed and the texture is made finer and the coarsening of the texture at the high temperature is obstructed. The prevention of invasion to Cu and the improvement in the strength are excepted by slightly adding Cu to the solder. The embrittlement of the material is prevented and pliability is rendered by slightly adding In to the solder. The long-term use in the atmosphere is realized by the slight combined Ge and P for the purpose of oxidation prevention in the solder bath. The system of a high liquidus line temperature is selected and the apparent melting point is raised to the extent of not drastically changing the soldering temperature without the occurrence of a lift-off, by which the high temperature characteristic is assured.;COPYRIGHT: (C)2002,JPO
机译:解决的问题:提供一种即使在高温下长时间使用也不会改变其结构的焊料,并且能够确保接头边界强度,并且即使长时间在流焊中使用也不会被氧化。解决方案:在高温下长时间使用的情况下,可以确保接头边界处的强度,并且通过在Sn-Ag-Bi共晶体系中少量添加Ni,可以确保在高温下结构的稳定性。焊接。将少量的Ti添加到该结构中,通过该结构Ti分散并且使纹理变细,并且阻止了在高温下纹理的粗化。通过在焊料中少量添加铜,可以防止铜的侵入和强度的提高。通过向焊料中稍微添加In,可以防止材料的脆化并提供柔韧性。 Ge和P的少量结合可实现在大气中的长期使用,目的是防止焊料浴中的氧化。选择液相线温度高的系统,并且将表观熔点提高到不会显着改变焊接温度而不会发生剥离的程度,从而确保了高温特性。日本特许厅

著录项

  • 公开/公告号JP2002178191A

    专利类型

  • 公开/公告日2002-06-25

    原文格式PDF

  • 申请/专利权人 HITACHI LTD;

    申请/专利号JP20000376560

  • 申请日2000-12-06

  • 分类号B23K35/26;B23K1/00;C22C13/02;H05K3/34;

  • 国家 JP

  • 入库时间 2022-08-22 00:57:22

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