首页>
外国专利>
METHOD FOR PRODUCING EPITAXIAL SILICON WAFER AND EPITAXIAL SILICON WAFER
METHOD FOR PRODUCING EPITAXIAL SILICON WAFER AND EPITAXIAL SILICON WAFER
展开▼
机译:制造硅外延片的方法及硅外延片
展开▼
页面导航
摘要
著录项
相似文献
摘要
PROBLEM TO BE SOLVED: To improve the gettering capability of an epitaxial silicon wafer and to provide an epitaxial silicon wafer in which shortening of the carrier diffusion length is suppressed.;SOLUTION: A method for producing the epitaxial silicon wafer comprises the steps of: growing a nitrogen-doped silicon single crystal rod by a Czochralski method; slicing the silicon single crystal rod into silicon single crystal wafers; subjecting the silicon single crystal wafers to heat treatment so as to diminish the crystal defects in the vicinity of the surface of each silicon single crystal wafer; further forming a silicon epitaxial layer on the surface of each silicon single crystal wafer; and subjecting each resultant silicon single crystal wafer to heat treatment comprising rapid heating and rapid cooling. The objective epitaxial silicon wafer is characterized in that the silicon epitaxial layer is formed on the nitrogen-doped silicon single crystal wafer, dislocation loops are contained in the bulk, the BMD density in the bulk is ≥5×108 pieces/cm3, and the carrier diffusion length is 300 to 600 μm.;COPYRIGHT: (C)2002,JPO
展开▼
机译:解决的问题:为了提高外延硅晶片的吸杂能力并提供一种抑制载流子扩散长度缩短的外延硅晶片。解决方案:一种用于制造外延硅晶片的方法包括以下步骤:生长通过切克劳斯基法(Czochralski method)掺杂氮的硅单晶棒;将硅单晶棒切成硅单晶晶片;对硅单晶晶片进行热处理,以减少每个硅单晶晶片表面附近的晶体缺陷;在每个单晶硅晶片的表面上还形成硅外延层;对所得的各单晶硅晶片进行包括快速加热和快速冷却的热处理。客观外延硅晶片的特征在于,硅外延层形成在掺杂氮的硅单晶晶片上,位错环包含在主体中,主体中的BMD密度为5×108个/ cm 3,并且载流子扩散长度为300至600μm。版权所有:(C)2002,JPO
展开▼