SEMICONDUCTOR POWER SUPPLY DEVICE AND ITS MANUFACTURING METHOD, SEMICONDUCTOR INTEGRATED CIRCUIT INTEGRATING THE SEMICONDUCTOR POWER SUPPLY DEVICE, AND IC CARD OR IC TAG MOUNTED WITH THE SEMICONDUCTOR INTEGRATED CIRCUIT

摘要

PROBLEM TO BE SOLVED: To achieve a semiconductor power supply device that can be integrated on a semiconductor chip, continuously and efficiently supplies electrical energy, and at the same time, is easily manufactured. SOLUTION: At the upper section of a semiconductor substrate 10, made of single-crystal p-type silicon, a porous p-type region 10p containing tritium is formed. On the porous p-type region 10p, a porous n-type region 11n containing tritium is formed, and on a surface at the opposite side of the porous n-type region 11n on the semiconductor substrate 10, a p-side electrode 12 is formed. On the porous n-type region 11n, an n-side electrode 13 is formed, and on the n-side electrode 13, a passivation film 14 made of silicon nitride is formed. In the p- and n-side electrodes 12 and 13, a power output terminal 15 is provided.