首页> 外国专利> METHOD FOR PRODUCING HIGH QUALITY SEMICONDUCTOR NANOCRYSTAL DOPED WITH MANGANESE

METHOD FOR PRODUCING HIGH QUALITY SEMICONDUCTOR NANOCRYSTAL DOPED WITH MANGANESE

机译:掺杂锰的高质量半导体纳米晶的制备方法

摘要

PROBLEM TO BE SOLVED: To provide a method for producing a high quality nanocrystal doped with manganese.;SOLUTION: This method has generally the following processes: (a) a process where a manganese organometallic precursor is mixed with a group II organometallic precursor and a group VI organometallic precursor to supply a mixture of precursors; (b) a process where the mixture of precursors is diluted by a dilution solvent to supply a injection mixture; (c) a process where a coordination solvent is heated; (d) a process where the heated coordination solvent is stirred; and (e) a process where the injection mixture is injected into the heated coordination solvent being stirred. This method is useful especially for producing a high quality zinc selenide(ZnSe) nanocrystal doped with manganese, a high quality zinc sulfide(ZnS) nanocrystal doped with manganese, and a high quality zinc telluride(ZnTe) nanocrystal doped with manganese.;COPYRIGHT: (C)2002,JPO
机译:解决的问题:提供一种生产高质量的锰掺杂纳米晶体的方法。解决方案:该方法通常具有以下过程:(a)锰有机金属前驱体与II类有机金属前驱体混合的过程,以及VI族有机金属前体,以提供前体混合物; (b)将前体混合物用稀释溶剂稀释以提供注射混合物的方法; (c)加热配位溶剂的过程; (d)搅拌加热的配位溶剂的过程; (e)将注入混合物注入被搅拌的加热的配位溶剂中的方法。该方法特别适用于生产掺杂有锰的高质量硒化锌(ZnSe)纳米晶体,掺杂有锰的高质量硫化锌(ZnS)纳米晶体和掺杂有锰的高质量碲化锌(ZnTe)纳米晶体。日本特许厅(C)2002

著录项

  • 公开/公告号JP2002097100A

    专利类型

  • 公开/公告日2002-04-02

    原文格式PDF

  • 申请/专利权人 NEC CORP;

    申请/专利号JP20010224548

  • 发明设计人 NORRIS DAVID J;

    申请日2001-07-25

  • 分类号C30B29/46;C09K11/06;

  • 国家 JP

  • 入库时间 2022-08-22 00:54:16

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