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Syntheses and applications of manganese-doped II-VI semiconductor nanocrystals.

机译:锰掺杂的II-VI半导体纳米晶体的合成与应用。

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摘要

Syntheses, characterizations, and applications of two different Mn-doped semiconductor nanocrystals, ZnS:Mn and CdS:Mn/ZnS core/shell, were investigated.; ZnS:Mn nanocrystals with sizes between 3 and 4 nm were synthesized via a competitive reaction chemistry. A direct current (dc) electroluminescent (EL) device having a hybrid organic/inorganic multilayer structure of an indium tin oxide (ITO) transparent conducting electrode, a (poly(3,4-ethylenedioxythiophene)/poly(styrenesulfonate) (PEDOT-PSS) and a poly(N-vinylcarbazole) (PVK) bilayer hole transport film, a ZnS:Mn nanocrystal layer, and Al dot contacts was demonstrated to emit blue (∼445 and ∼495 nm) from PVK and yellow (∼600 nm) light from Mn activator in ZnS. The EL emission spectrum was dependent upon both the voltage and Mn concentration, showing a decreasing nanocrystal to PVK emission ratio from 10 at 20 V to 4 at 28 V, and an increasing ratio from 1.3 at 0.40 mol % to 4.3 at 2.14 mol %.; Mn-doped CdS core nanocrystals were produced ranging from 1.5 to 2.3 nm in diameter with a ZnS shell via a reverse micelle process. In contrast to CdS:Mn nanocrystals passivated by n-dodecanethiol, ZnS-passivated CdS:Mn (CdS:Mn/ZnS core/shell) nanocrystals were efficient and photostable. CdS:Mn/ZnS core/shell nanocrystals exhibited a quantum yield of ∼18%, and the photoluminescence (PL) intensity increased by 40% after 400 nm UV irradiation in air. X-ray photoelectron spectroscopy (XPS) data showed that UV irradiation of CdS:Mn/ZnS nanocrystals induces the photooxidation of the ZnS shell surface to ZnSO4. This photooxidation product is presumably responsible for the increased PL emission by serving as a passivating surface layer. Luminescent lifetime data from the core/shell nanocrystals could be fit with two exponential functions, with a time constant of ∼170 nsec for the defect-related centers and of ∼1 msec for the Mn centers.; The CdS:Mn/ZnS nanocrystals with a core crystal diameter of 2.3 nm and a 0.4 nm thick ZnS shell were used as an electroluminescent material. EL devices were tested having a hybrid organic/inorganic multilayer structure of ITO//PEDOT-PSS//conjugated polymer//CdS:Mn/ZnS nanocrystal//Al. Orange from PVK device and green EL emission from poly(p-phenylene vinylene) (PPV) device were observed, respectively. These observations are shown to be consistent with the energy level diagrams of the EL devices.; The CdS:Mn/ZnS core/shell quantum dots are not water-soluble because of their hydrophobicity. Silica-overcoated CdS:Mn/ZnS quantum dots were synthesized to create water-soluble quantum dots. The amorphous and porous silica layer did not significantly modify the optical and photophysical properties of CdS:Mn/ZnS quantum dots.
机译:研究了两种不同的锰掺杂半导体纳米晶体ZnS:Mn和CdS:Mn / ZnS核/壳的合成,表征和应用。通过竞争反应化学合成了尺寸在3至4 nm之间的ZnS:Mn纳米晶体。具有铟锡氧化物(ITO)透明导电电极,(聚(3,4-乙撑二氧噻吩)/聚(苯乙烯磺酸盐)(PEDOT-PSS)的混合有机/无机多层结构的直流(dc)电致发光(EL)器件)和一个聚(N-乙烯基咔唑)(PVK)双层空穴传输膜,一个ZnS:Mn纳米晶体层以及Al点触点被证明从PVK发出蓝色(〜445和〜495 nm)并发出黄色(〜600 nm) ZnS中的Mn活化剂的电子发射光谱取决于电压和Mn浓度,显示纳米晶体与PVK的发射比例从20 V时的10降低到28 V时的4,并且在0.40 mol%时从1.3的比例增加。 -在2.14 mol%时达到4.3;在ZnS壳中通过反向胶束工艺生产的Mn掺杂的CdS核纳米晶体的直径在1.5至2.3 nm之间,与 n -十二烷硫醇,ZnS钝化的CdS:Mn(CdS:Mn / ZnS核/壳)纳米晶体高效且照片丰富好吃CdS:Mn / ZnS核/壳纳米晶体的量子产率约为18%,在空气中进行400 nm紫外线照射后,其光致发光(PL)强度提高了40%。 X射线光电子能谱(XPS)数据表明,CdS:Mn / ZnS纳米晶体的紫外线照射引起ZnS壳表面光氧化为ZnSO 4 。该光氧化产物可能通过用作钝化表面层而导致PL排放增加。核/壳纳米晶体的发光寿命数据可以用两个指数函数拟合,缺陷相关中心的时间常数约为170纳秒,锰中心的时间常数约为1毫秒。具有2.3 nm核心晶体直径和0.4 nm厚ZnS壳层的CdS:Mn / ZnS纳米晶体用作电致发光材料。测试了具有ITO // PEDOT-PSS //共轭聚合物// CdS:Mn / ZnS纳米晶体// Al的有机/无机杂化多层结构的EL器件。分别观察到PVK装置产生的橙色和聚(对苯二甲撑-亚苯基亚乙烯基)(PPV)装置产生的绿色EL发射。这些观察结果表明与EL器件的能级图一致。 CdS:Mn / ZnS核/壳量子点由于具有疏水性而不溶于水。合成二氧化硅包覆的CdS:Mn / ZnS量子点以创建水溶性量子点。无定形和多孔二氧化硅层不会显着改变CdS:Mn / ZnS量子点的光学和光物理性质。

著录项

  • 作者

    Yang, Heesun.;

  • 作者单位

    University of Florida.;

  • 授予单位 University of Florida.;
  • 学科 Engineering Materials Science.
  • 学位 Ph.D.
  • 年度 2003
  • 页码 131 p.
  • 总页数 131
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 工程材料学;
  • 关键词

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