METHOD FOR CONTROLLING SWITCHING SPEED OF INSULATED GATE BIPOLAR TRANSISTOR(IGBT) ELEMENT, ITS STRUCTURE AND MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To accelerate switching by shortening a life of a minority carrier in an insulated gate bipolar transistor(IGBT) element.;SOLUTION: The insulated gate bipolar transistor(IGBT) element comprises a p-n-p type bipolar transistor having a p+-type silicon substrate 1 as a collector, an n+-type buffer layer 2 formed on the substrate 1 and having an n--type thin layer 3 on an upper part, and a p-type base region selectively formed on a main surface of the layer 3, an n+-type emitter region formed on a main surface of the base region, an emitter metal formed on the emitter region, and a gate electrode of a polysilicon formed on a gate oxide of a channel region of an upper part of a part surrounded by the p-type base region, n--type epitaxial layer and an n+-type emitter region. The transistor (IGBT) element further comprises a misfit transfer layer formed by a method for doping a germanium(Ge) in the n+-type buffer layer 2 in adjacent interfaces between the layer 2, the substrate 1 and the epitaxial layer 3.;COPYRIGHT: (C)2002,JPO