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METALLIC MATERIAL, SPUTTERING TARGET MATERIAL FOR THIN FILM DEPOSITION AND THIN FILM

机译:金属材料,薄膜沉积和薄膜的溅射靶材

摘要

PROBLEM TO BE SOLVED: To obtain an alloy material in which the improvement of weather resistance and stability and facilitation in a sputtering stage when used as a sputtering target are attained and to obtain a thin film.;SOLUTION: An alloy obtained by incorporating a CuAg alloy obtained by incorporating, by weight, 0.3 to 10.0% Ag into Cu, e.g. with Ti of 0.01 to 5.0% as a corrosion resistance improving material is used as a sputtering material for thin film deposition, and a thin film is produced thereby.;COPYRIGHT: (C)2002,JPO
机译:要解决的问题:获得一种合金材料,该合金材料在用作溅射靶材时可实现耐候性和稳定性以及在溅射阶段的易化性得到改善,并获得薄膜。通过将0.3至10.0%的Ag掺入Cu中获得的合金,例如Ti为0.01-5.0%的耐腐蚀改进材料用作薄膜沉积的溅射材料,从而制得薄膜。; COPYRIGHT:(C)2002,JPO

著录项

  • 公开/公告号JP2002069550A

    专利类型

  • 公开/公告日2002-03-08

    原文格式PDF

  • 申请/专利权人 FURUYA KINZOKU:KK;

    申请/专利号JP20000267822

  • 发明设计人 UENO TAKASHI;ODA NOBUHIRO;

    申请日2000-09-04

  • 分类号C22C9/00;C23C14/34;H01L21/203;H01L21/285;

  • 国家 JP

  • 入库时间 2022-08-22 00:53:43

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