METHOD OF FORMING LASER CIRCUIT HAVING LOW PENETRATION OHMIC CONTACT PROVIDING IMPURITY GETTERING AND THE RESULTANT LASER CIRCUIT

摘要

PROBLEM TO BE SOLVED: To prevent the migration of impurities to the active area of a semiconductor device during the formation of a contact structure.;SOLUTION: During the formation of the contact structure which is formed by forming a thin layer of a pure metal on a semiconductor cap layer, the thin metal layer is caused to react with the cap layer, and the migration of impurities to the active area of the semiconductor device is prevented by trapping mobile impurities and self-interstitials diffusing within the cap layer and in nearby metal layers in the resulting reacted layer. The level of integration of a semiconductor optoelectronic device is improved by the semiconductor cap layer, such as an InGaAs cap layer having a thickness of ≤200 nm together with the pure metal layer and, in addition, fewer impurities are introduced in the formation of an ohmic contact than with prior art alloy contacts.;COPYRIGHT: (C)2002,JPO