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METHOD OF THERMALLY TREATING ZNSE CRYSTAL SUBSTRATE, THERMALLY TREATED SUBSTRATE, AND LIGHT EMITTING DEVICE

机译:热处理ZNSE晶体基质,热处理基质和发光装置的方法

摘要

PROBLEM TO BE SOLVED: To provide a thermal treatment method for manufacturing a ZnSe crystal substrate that is electrically conductive, excellent in crystallinity, low in SA light emission intensity, high in reproducibility, and a ZnSe crystal substrate manufactured through the above method, and to provide an LED using the above crystal substrate. SOLUTION: Al is diffused into the ZnSe crystal substrate through a thermal treatment method, wherein an Al film is formed on the surface of the ZnSe crystal substrate, and the crystal substrate is thermally treated in an Se atmosphere in a closed vessel and successively thermally treated again in a Zn atmosphere in the closed vessel. The ZnSe crystal substrate obtained through the above method and a light emitting device using the above crystal substrate are provided.
机译:解决的问题:提供一种用于制造导电性,结晶性优异,SA发光强度低,再现性高的ZnSe晶体基板的热处理方法,以及通过上述方法制造的ZnSe晶体基板。提供一种使用上述晶体基板的LED。解决方案:通过热处理方法将Al扩散到ZnSe晶体基板中,其中在ZnSe晶体基板的表面上形成Al膜,然后在Se气氛中于密闭容器中对晶体基板进行热处理,然后对其进行连续热处理。再次在密闭容器中的Zn气氛中。提供通过上述方法获得的ZnSe晶体基板和使用上述晶体基板的发光器件。

著录项

  • 公开/公告号JP2001332506A

    专利类型

  • 公开/公告日2001-11-30

    原文格式PDF

  • 申请/专利权人 SUMITOMO ELECTRIC IND LTD;

    申请/专利号JP20000147588

  • 发明设计人 NAMIKAWA YASUO;FUJIWARA SHINSUKE;

    申请日2000-05-19

  • 分类号H01L21/225;H01L21/363;H01L33/00;

  • 国家 JP

  • 入库时间 2022-08-22 00:53:28

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