首页> 外国专利> METHOD OF THERMALLY TREATING ZNSE CRYSTAL SUBSTRATE, THERMALLY TREATED SUBSTRATE, AND LIGHT EMITTING DEVICE

METHOD OF THERMALLY TREATING ZNSE CRYSTAL SUBSTRATE, THERMALLY TREATED SUBSTRATE, AND LIGHT EMITTING DEVICE

机译:热处理ZNSE晶体基质,热处理基质和发光装置的方法

摘要

This invention relates to a method for the heat treatment of a ZnSe crystal substrate to dope it with Al as a donor impurity, a ZnSe crystal substrate prepared by this heat treatment and a light-emitting device using the ZnSe crystal substrate, in particular, the method for the heat treatment of a ZnSe crystal substrate comprising previously forming an Al film on the substrate, first subjecting the substrate to a heat treatment in a Se atmosphere and then subjecting to a heat treatment in a Zn atmosphere. IMAGE
机译:本发明涉及对ZnSe晶体衬底进行热处理以掺入Al作为施主杂质的方法,通过该热处理制备的ZnSe晶体衬底以及使用该ZnSe晶体衬底的发光器件,特别是涉及一种发光器件。用于ZnSe晶体衬底的热处理的方法,包括预先在衬底上形成Al膜,首先在Se气氛中对衬底进行热处理,然后在Zn气氛中进行热处理。 <图像>

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号