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Stress tunable tantalum and tantalum nitride films

机译:应力可调钽和氮化钽膜

摘要

The present disclosure pertains to our discovery that the residual stress residing in a tantalum (Ta) film or a tantalum nitride (TaNx, where 0x≦1.5) film can be controlled (tuned) by controlling particular process variables during deposition of the film. Process variables of particular interest during film deposition, for sputter applied Ta and TaNx films, include the following. The power to the sputtering target; the process chamber pressure (i.e. the concentration of various gases and ions present in the chamber); the substrate DC offset bias voltage (typically an increase in the AC applied substrate bias power); and, the temperature of the substrate upon which the film is being deposited. When the Ta or TaNx film is deposited using IMP sputtering, the power to the ionization coil can be used for stress tuning of the film. Of these variables, the process chamber pressure and the substrate offset bias most significantly affect the tensile and compressive stress components, respectively. The most advantageous tuning of a sputtered film is achieved using Ion Metal Plasma (IMP) as the film deposition method. This sputtering method provides for particular control over the ion bombardment of the depositing film surface. Tantalum (Ta) films deposited using the IMP method typically exhibit a residual stress ranging from about +1×10+10 dynes/cm2 (tensile stress) to about −2×10+10 dynes/cm2 (compressive stress), depending on the process variables described above. Tantalum nitride (TaNx) films deposited using the IMP method typically can be tuned to exhibit a residual stress within the same range as that specified above with reference to Ta films. We have been able to reduce the residual stress in either the Ta or TaNx films to range between about 6×10+9 and about −6×10+9 dynes/cm2 using tuning techniques described herein. ;The Ta and TaNx films can also be tuned subsequent to deposition using ion bombardment of the film surface and annealing of the deposited film.
机译:本公开内容与我们的发现有关,可以通过控制(调整)来控制(调谐)钽(Ta)膜或氮化钽(TaN x ,其中0 x 薄膜,在薄膜沉积过程中特别关注的工艺变量包括以下内容。溅射靶的功率;处理室压力(即处理室内存在的各种气体和离子的浓度);基板直流偏置偏置电压(通常增加交流电施加的基板偏置功率);以及其上沉积膜的基底的温度。当使用IMP溅射沉积Ta或TaN 薄膜时,电离线圈的功率可用于调整薄膜的应力。在这些变量中,处理室压力和基板偏移偏差分别对拉应力和压应力分量影响最大。使用离子金属等离子体(IMP)作为薄膜沉积方法可以实现溅射薄膜的最有利调整。该溅射方法提供了对沉积膜表面的离子轰击的特别控制。使用IMP方法沉积的钽(Ta)膜的残余应力通常在大约1±10×10达因/厘米2的(拉伸应力)到负2× 10 + 10 dynes / cm 2 (压缩应力),取决于上述过程变量。通常可以调整使用IMP方法沉积的氮化钽(TaN x )膜,以显示与上述Ta膜相同的残余应力。我们已经能够将Ta或TaN x 膜中的残余应力减小到大约6×10 + 9 到大约负6×10 9达因/厘米 2 ,使用本文所述的调整技术。 ; Ta和TaN x 膜也可以在沉积之后使用膜表面的离子轰击和沉积膜的退火进行调整。

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