首页> 外国专利> Optical proximity effect correcting method and mask data forming method in semiconductor manufacturing process, which can sufficiently correct optical proximity effect, even under various situations with regard to size and shape of design pattern, and space width and position relation between design patterns

Optical proximity effect correcting method and mask data forming method in semiconductor manufacturing process, which can sufficiently correct optical proximity effect, even under various situations with regard to size and shape of design pattern, and space width and position relation between design patterns

机译:半导体制造过程中的光学邻近效应校正方法和掩模数据形成方法,即使在设计图案的尺寸和形状以及设计图案之间的空间宽度和位置关系的各种情况下,也可以充分地校正光学邻近效应。

摘要

An optical proximity effect correcting method in a semiconductor manufacturing process includes adding, detecting, judging, and deleting. The adding includes adding a first correcting region around a portion of a first design pattern. The portion faces a second design pattern. A first corrected design pattern includes the first correcting region and the first design pattern. The detecting includes detecting a space between the first corrected design pattern and the second design pattern. The judging includes judging whether the space is smaller than or equal to a predetermined value. The deleting includes deleting at least a portion of the first correcting region such that the space is larger than the predetermined value, when the space is smaller than or equal to the predetermined value.
机译:半导体制造过程中的光学邻近效应校正方法包括添加,检测,判断和删除。添加包括在第一设计图案的一部分周围添加第一校正区域。该部分面对第二设计图案。第一校正设计图案包括第一校正区域和第一设计图案。该检测包括检测第一校正设计图案和第二设计图案之间的空间。判断包括判断空间是否小于或等于预定值。删除包括:当空间小于或等于预定值时,删除第一校正区域的至少一部分,以使空间大于预定值。

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