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Process for production of thin film semiconductor thin film, semiconductor device, process for production of semiconductor thin film, and apparatus for production of semiconductor thin film

机译:薄膜半导体薄膜的制造方法,半导体装置,半导体薄膜的制造方法以及半导体薄膜的制造装置

摘要

A process for producing a thin film (particularly semiconductor thin film) which includes irradiating a raw thin film containing a volatile gas with an excimer laser beam having a pulse width of 60 ns or more, thereby removing the volatile gas from the raw thin film. The process effectively reduces the content of volatile gas such as hydrogen in thin film as in the case where degassing is performed by using an electric furnace. The degassed thin film can be recrystallized in a short time without breaking by irradiation with an excimer laser beam.
机译:制备薄膜(特别是半导体薄膜)的方法,包括用脉冲宽度为60ns或更大的准分子激光束照射含有挥发性气体的原始薄膜,从而从原始薄膜中除去挥发性气体。与使用电炉进行脱气的情况一样,该方法有效地减少了薄膜中诸如氢的挥发性气体的含量。经脱气的薄膜可以在短时间内重结晶而不会因受激准分子激光束的照射而破裂。

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