Process for production of thin film semiconductor thin film semiconductor device process for production of semiconductor thin film and apparatus for production of semiconductor thin film

摘要

PURPOSE: A method for manufacturing a thin film, a semiconductor thin film, a semiconductor device, a method for manufacturing a semiconductors thin film, and a system for manufacturing a semiconductor thin film are provided to manufacture a thin film, especially a semiconductor thin film, in which volatile gases, e.g. hydrogen, in a thin film can be reduced just like a case employing an electric furnace without sacrifice of productivity while preventing breakage of the film. CONSTITUTION: A thin film(2) containing volatile gas is irradiated with excimer laser light(5) having pulse width of 60 nS or longer thus degassing the thin film. The thin film(2) can be protected against breakage even if it is re-crystallized subsequently and short time processing is realized by excimer laser irradiation. Alternatively, a thin film containing 2 atm.% or more of volatile gas is irradiated with excimer laser having pulse width of 60 nS or longer thus degassing the thin film(2) while crystallizing. Since nuclei are formed uniformly, size of crystal particles is made uniform and variations of characteristics are suppressed.