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Stiction-free microstructure releasing method for fabricating MEMS device

机译:用于制造MEMS器件的无静态微结构释放方法

摘要

Disclosed is a a method of fabricating a MEMS device by means of surface micromachining without leaving any stiction or residues by etching silicon oxide of a sacrificial layer, which is an intermediate layer between a substrate and a microstructure, rather than by etching silicon oxide of a semiconductor device. The method according to the invention includes the steps of supplying alcohol vapor bubbled with anhydrous HF, maintaining a temperature of the supplying device and a moving path of the anhydrous HF and the alcohol to be higher than a boiling point of the alcohol, performing a vapor etching by controlling a temperature and a pressure to be within the vapor region of a phase equilibrium diagram of water, and removing silicon oxide of a sacrificial layer on a lower portion of the microstructure.
机译:公开了一种通过表面微机械加工制造MEMS器件的方法,该方法不通过蚀刻牺牲层(其是衬底和微结构之间的中间层)的氧化硅,而不是通过蚀刻半导体的氧化硅而留下任何附着力或残留物。设备。根据本发明的方法包括以下步骤:供应用无水HF鼓泡的醇蒸气,保持供应装置的温度以及无水HF和醇的移动路径高于醇的沸点,进行蒸气。通过控制温度和压力在水的相平衡图的蒸气区域内进行蚀刻,并去除微结构下部的牺牲层的氧化硅。

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