CLEANING SOLUTION FOR USE IN METAL RESIDUE REMOVAL AND A SEMICONDUCTOR DEVICE MANUFACTURING METHOD FOR EXECUTING CLEANING BY USING THE CLEANING SOLUTION AFTER CMP

摘要

There are provided a substrate cleaning solution formed of a citric acid aqueous solution, into which a chelating agent is added, in order to remove a metal or metallic compound on a substrate, and also a semiconductor device manufacturing method which employs a citric acid aqueous solution, into which the chelating agent is added, as the cleaning solution in a substrate cleaning step after the CMP step, in order to achieve high yield. The chelating agent reacts with metallic complex which is formed by a reaction between the citric acid and the metal, then extracts metallic ions from the metal complex, and then reacts with the metallic ions to form chelating compound. Thus, the citric acid can be reused by action of the chelating agent. As a result, the citric acid aqueous solution of a low concentration can achieve an effect of removing metal or metallic oxide, which is equivalent to or more than the citric acid aqueous solution of a high concentration.