首页>
外国专利>
Effect of doped amorphous Si thickness on better poly 1 contact resistance performance for nand type flash memory devices
Effect of doped amorphous Si thickness on better poly 1 contact resistance performance for nand type flash memory devices
展开▼
机译:掺杂非晶硅厚度对nand型闪存器件的poly 1接触电阻性能的影响
展开▼
页面导航
摘要
著录项
相似文献
摘要
In one embodiment, the present invention relates to a method of forming a flash memory cell, involving the steps of forming a tunnel oxide on a substrate; forming a first polysilicon layer over the tunnel oxide by chemical vapor deposition using a silicon containing gas and a mixture of a phosphorus containing gas and a carrier gas, the first polysilicon layer having a thickness from about 800 Å to about 1,000 Å; forming an insulating layer over the first polysilicon layer, the insulating layer comprising a first oxide layer over the first polysilicon layer, a nitride layer over the first oxide layer, and a second oxide layer over the nitride layer; forming a second polysilicon layer over the insulating layer; forming a tungsten silicide layer over the second polysilicon layer by chemical vapor deposition using WF6 and SiH2Cl2; etching at least the first polysilicon layer, the second polysilicon layer, the insulating layer, and the tungsten silicide layer thereby defining at least one stacked gate structure; and forming a source region and a drain region in the substrate, thereby forming at least one memory cell.
展开▼