Method of fabricating an MOCVD titanium nitride layer utilizing a pulsed plasma treatment to remove impurities

摘要

A MOCVD is performed to form a titanium nitride layer on the surface of a semiconductor substrate. Following that, a pulsed plasma treatment is performed to remove hydro-carbon impurities from the titanium nitride layer. Therein, the pulsed plasma treatment is performed in a pressure chamber comprising nitrogen gas (N₂) hydrogen gas (H₂) or argon gas (Ar). A pressure of the pressure chamber is controlled to between 1 to 3 Torr, with the power of the pressure chamber controlled to between 500 and 1000 watts.