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POST-EPITAXIAL THERMAL OXIDATION FOR REDUCING MICROSTEPS ON POLISHED SEMICONDUCTOR WAFERSOST EPITAXIAL THERMAL OXIDATION
POST-EPITAXIAL THERMAL OXIDATION FOR REDUCING MICROSTEPS ON POLISHED SEMICONDUCTOR WAFERSOST EPITAXIAL THERMAL OXIDATION
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机译:表皮后热氧化以减少抛光的半导体晶片上的微粘菌而减少表皮热氧化
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摘要
Disclosed is a system and method for handling post epitaxial thermal oxidation. The method produces semiconductor wafers by performing the steps of forming a wafer substrate, depositing an epilayer on the substrate, oxidizing a top portion of the epilayer, and removing the oxidized top portion. As a result, the wafer's surface is very smooth, with little or no micro-steps thereon.
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