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Post-epitaxial thermal oxidation for reducing microsteps on polished semiconductor wafers
Post-epitaxial thermal oxidation for reducing microsteps on polished semiconductor wafers
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机译:外延后热氧化可减少抛光半导体晶片上的微步
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摘要
A method for reducing microsteps on an epitaxial layer deposited on a polished semiconductor wafer substrate by post-epitaxial thermal oxidation. The method produces very smooth semiconductor wafers by performing the steps of depositing an epitaxial layer on a wafer substrate, oxidizing a top portion of the epitaxial layer, and removing the oxidized top portion. As a result, the wafer's surface presents little or no microsteps thereon.
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