Method of epitaxially growing III-V compound semiconductor containing nitrogen and at least another group V element utilizing MBE

摘要

A method of manufacturing a compound semiconductor is provided which can produce a mixed crystal layer with high nitrogen content without lowering the crystallinity when a III-V compound semiconductor layer including nitrogen and at least another V group element is grown by molecular beam epitaxy.;The method of manufacturing a compound semiconductor is characterized in that a III-V compound semiconductor crystal including nitrogen and at least another V group element is grown by irradiating the substrate with material molecular beams in a crystal growth chamber so evacuated that the mean free path of material molecules is larger than the distance between the substrate and the molecular beam sources, a nitrogen compound is used as the nitrogen sources, molecules of the nitrogen compound decompose after they reach the substrate surface, and only nitrogen atoms are incorporated into the growing semiconductor crystal