EPITAXIAL SUBSTRATE FOR MBE, AND METHOD FOR FORMING III-V COMPOUND SEMICONDUCTOR FILM USING MBE METHOD

摘要

PROBLEM TO BE SOLVED: To provide an epitaxial substrate for an MBE method for depositing a III-V compound semiconductor film with the use of the MBE method.;SOLUTION: The epitaxial substrate 11 for the MBE includes: a III-V compound semiconductor single crystal wafer 13 such as GaAs, InP; and a homoepitaxial film 15 having the surface 15a for depositing the III-V compound semiconductor film with the use of the MBE method. A carbon density, an oxygen density, and a silicon density in an interface 17 between the semiconductor single crystal wafer 13 and the homoepitaxial film 15 are respectively less than 4×10¹⁸/cm³, less than 1×10¹⁸/cm³, and less than 4×10¹⁸/cm³. Before the deposition of the III-V compound semiconductor film 17 with the MBE method, forming the homoepitaxial film 15 on a polished surface 13a of the semiconductor single crystal wafer 13 reduces a dependency of an optical characteristic of the III-V compound semiconductor film 17 on the presence of a chemical etching process on the main surface of the wafer.;COPYRIGHT: (C)2008,JPO&INPIT