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Method for producing high quality heteroepitaxial growth using stress engineering and innovative substrates
Method for producing high quality heteroepitaxial growth using stress engineering and innovative substrates
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机译:使用应力工程和创新基板生产高质量异质外延生长的方法
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摘要
A method for producing a stress-engineered substrate includes selecting first and second materials for forming the substrate. An epitaxial material for forming a heteroepitaxial layer is then selected. If the lattice constant of the heteroepitaxial layer (aepi) is greater than that (asub) of the immediate substrate layer the epitaxial layer is deposited on, then the epitaxial layer is kept under compressive stress (negative stress) at all temperatures of concern. On the other hand, if the lattice constant of the heteroepitaxial layer (aepi) is less than that (asub) of the immediate substrate layer the epitaxial layer is deposited on, then the epitaxial layer is kept under tensile stress (positive stress). The temperatures of concern range from the annealing temperature to the lowest temperature where dislocations are still mobile.
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机译:一种用于制造应力工程基板的方法,包括选择用于形成基板的第一材料和第二材料。然后选择用于形成异质外延层的外延材料。如果异质外延层的晶格常数(a epi Sub>)大于直接衬底层的晶格常数(a sub Sub>),则在其上沉积外延层,则外延层在所关注的所有温度下均保持在压应力(负应力)下。另一方面,如果异质外延层的晶格常数(a epi Sub>)小于直接衬底层的晶格常数(a sub Sub>),则在其上沉积外延层,然后将外延层保持在拉应力(正应力)下。所关注的温度范围从退火温度到位错仍可移动的最低温度。
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