Method to reduce the moisture content in an organic low dielectric constant material

摘要

A method of forming an organic low k layer, for use as an interlevel dielectric layer in semiconductor integrated circuits, has been developed. An organic low k layer, such as a poly arylene ether layer, with a dielectric constant between about 2.6 to 2.8, is applied on an underlying metal interconnect pattern. The moisture contained in the as applied, organic low k layer, or the moisture absorbed by the organic low k layer, due to exposure to the environment, is then reduced via a high density plasma treatment, performed in a nitrogen ambient. The reduction in moisture can be accomplished, even when the organic low k layer had been exposed to the environment for a period of time as great as three months. The dielectric constant, of the organic low k layer, remains unchanged, as a result of the high density plasma treatment.