Method of designing circuit with field effect transistor and method of determining parameters of model used in such designing method

摘要

A method of designing a circuit with a field effect transistor (FET) for operation with a large signal. The method comprises the steps of expressing the FET with a two-terminal nonlinear circuit model having a source and a drain, such that a gate terminal thereof is open in at least a frequency band used thereby, and calculating behaviors of the circuit in operation with a large signal represented by a large amplitude of an input voltage, based on the two-terminal nonlinear circuit model.