Artificial neuron on the base of amp;bgr;-driven threshold element

摘要

A synapse element consisting of a smaller number of elements utilizing common semiconductor technology, and a neuron circuit and a neuron device using the synapse elements are provided. The synapse element comprises a transistor set consisting of two MIS transistors connected in series. The first transistor adjusts the effective &bgr;-value of the transistor set so as to correspond to the weight factor &ohgr; via voltage applied to its gate electrode, and the second transistor switches the current according to input voltage to its gate electrode, so that output of the transistor set represents synapse output &ohgr;X. A voltage holding element and a switching element furnished to the gate of the first transistor give the neuron device a learning ability.