Environmentally benign Group II and Group IV or V spin-on precursor materials

摘要

The present invention is directed to the synthesis, processing and test of improved spin-on precursor materials comprising at least one Group II metal and at least one Group IV or Group V metal, useful for making thin oxide films, useful, for example, in various electronic devices, such as ferroelectric devices. For example, barium strontium titanate spin-on precursor materials are useful for making thin films of barium strontium titanate (BST) for, e.g., ferroelectric capacitors. A method is provided for fabricating electronic devices employing such Group II-Group IV (or V) oxides as the active device, using polyether acids. The method comprises: (a) providing a substrate; (b) forming a bottom electrode on the substrate; (c) depositing a solution comprising polyether acid salts of the Group II and Group IV or Group V metal ions; (d) forming the oxide film from the solution; and (e) forming a top electrode on the oxide film. As a consequence of the method, improved electronic devices are formed from less toxic and easier handled precursors and solvents. The present invention provides for a soluble spin-on precursor which is compatible and soluble in non-toxic and environmentally benign solvents. In addition, this spin-on precursor material has been shown to give much improved electrical performance properties of the BST thin films produced.