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NiSi contacting extensions of active regions
NiSi contacting extensions of active regions
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机译:NiSi接触扩展有源区
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摘要
Smaller active regions are enabled by forming nickel suicide extensions from the nickel silicide layers on the source/drain regions and landing contacts on the nickel silicide extensions. The nickel silicide extensions are formed by implanting Si ions in the field oxide areas adjacent to the active regions, prior to depositing Ni, to catalyze the reaction of Ni and Si during annealing to form a nickel silicide layer that extends from the source/drain regions onto the Si-implanted field oxide areas. In an embodiment of the present invention, the nickel silicide is NiSi.
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