Ferroelectric and paraelectric thin film devices using dopants which eliminate ferroelectricity

摘要

A method for simultaneously producing areas of paraelectric states and areas of ferroelectric states on a single thin film layer, thereby reducing the number of processing steps required to produce integrated chips containing both standard capacitors and non-volatile memory devices from the number of steps needed using the conventional approach. A device containing both ferroelectric capacitors and non-ferroelectric capacitors using a single thin film as the dielectric.