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Method of determining the doping concentration and defect profile across a surface of a processed semiconductor material
Method of determining the doping concentration and defect profile across a surface of a processed semiconductor material
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机译:确定经过处理的半导体材料表面上的掺杂浓度和缺陷轮廓的方法
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摘要
A method (100) of determining a doping type and a doping concentration of a semiconductor material (101) includes the steps of moving carriers (103) in the material, wherein a number of carriers is a function of the doping concentration of the material (101) and a type of carriers is a function of the doping type of the material (101). The carriers are deflected (130) toward a surface (110) of the material (101) and an accumulated charge profile on the surface of the material, due to the deflected carriers, is detected (140) and used to calculate (180) the doping concentration across a surface (110) of the material (101).
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